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基于自旋转移矩的磁性随机存储器(Spin Transfer Torque-Based Magnetoresistive RAM,STT-MRAM)具有非易失性、可无限擦写和快速写入等优点而有望成为下一代低功耗通用存储器.尤其是近年来STT-MRAM商用芯片的成功问世进一步推动了该器件的研究与应用.本文首先阐述了MRAM的基本原理与发展历程,着重介绍了写入技术的演变以及磁各向异性的改善.然后总结了近期在3个领域的研究成果:(1)学术界开展了大量研究以探讨制备工艺和器件结构等因素对界面垂直磁各向异性的影响;(2)CoFeB-MgO双界面结构被提出,该结构在不增大写入电流的前提下增强了磁隧道结的热稳定性势垒;(3)新兴的自旋轨道矩写入方式引起了广泛的关注,该技术有望解决传统自旋转移矩所面临的速度瓶颈和势垒击穿风险.最后,本文扼要地介绍了STT-MRAM在芯片设计领域的最新进展.
Spin Transfer Torque-Based Magnetoresistive RAM (STT-MRAM) is expected to be the next generation of low power general purpose memory with the advantages of non-volatile, unlimited erase and write speed, etc. Especially, Is the success of STT-MRAM commercial chip in recent years to further promote the research and application of the device.This paper first describes the basic principles and development of MRAM, focusing on the evolution of write technology and the improvement of magnetic anisotropy.And then The recent achievements in three fields are summarized as follows: (1) A large number of studies have been carried out in academia to investigate the influence of fabrication process and device structure on the perpendicular magnetic anisotropy of the interface; (2) CoFeB-MgO dual interface structure has been proposed , Which enhances the thermal stability barrier of the magnetic tunnel junction without increasing the write current. (3) Emerging spin-orbit writing has aroused widespread concern. It is expected to solve the problem of the traditional spin The speed bottleneck and the risk of barrier breakdown that the transfer moment faces.Finally, this article briefly introduces the latest development of STT-MRAM in the field of chip design.