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在400℃及低于400℃的温度下用氧/氯等离子气体在硅上生长了氧化物。研究了氧化物的电击穿强度和低温热退火后的界面及体内特性。业已表明,对于器件应用来讲,等离子生长氧化物的电性能是绰绰有余的。
Oxides were grown on silicon with oxygen / chlorine plasma gas at 400 ° C and below 400 ° C. The electrical breakdown strength of the oxide and the interfacial and in vivo properties after low temperature thermal annealing were investigated. It has been shown that the electrical properties of plasma grown oxides are more than adequate for device applications.