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本文根据红外电荷耦合器件设计制作中需要对3000(?)～1μm的二氧化硅膜层的厚度进行精确测量的实际问题,通过对干涉显微镜和激光椭圆偏振仪测厚原理的分析,提出了用上述两种方法相结合对3000(?)～1μm左右厚度的SiO_2层进行精确测量的方法,对其原理、测量步骤计算方法进行了叙述和说明,并对其测量误差进行了分析,得出了其精度由激光椭偏仪的精度所决定的结论。本文还给出了一组测试结果,并提出了将此法推广到与硅氧化膜性能相近的其它介质膜情况的可能性。
According to the actual problem that the thickness of silicon dioxide layer of 3000 (?) ~ 1μm needs to be accurately measured in the design of infrared charge-coupled device, the principle of interference microscope and laser ellipsometer is proposed. The above two methods are combined to accurately measure the thickness of about 3000 (?) ~ 1μm SiO2 layer, the principle and measurement steps are described and described the calculation method, and its measurement error was analyzed, and reached the Its accuracy is determined by the accuracy of the laser ellipsometer. This paper also gives a set of test results and proposes the possibility of extending this method to other dielectric films with similar performance to silicon oxide films.