论文部分内容阅读
采用射频反应磁控溅射方法,在Si(100)基片和石英基片上制备了具有高c轴择优取向的Al掺杂ZnO薄膜。利用X射线衍射、电子探针、透射光谱、光致荧光光谱等表征方法,研究了Al掺杂ZnO薄膜的成分、结构和光学性能。结果表明,薄膜具有六方纤锌矿结构,并具有较好的结晶特征。在可见光及红外光范围内,薄膜具有较好的透明度;利用反转调试法拟合了透射光谱,得到了薄膜的厚度值。通过光致荧光光谱的测量探讨了Al元素的掺入对ZnO的带隙宽度的影响,发现在相同温度下,Al掺杂量较高的样品,其带边发光峰位明显向高能端偏移。
Al-doped ZnO thin films with high c-axis preferred orientation were prepared on Si (100) substrates and quartz substrates by RF reactive magnetron sputtering. The composition, structure and optical properties of Al-doped ZnO thin films were characterized by X-ray diffraction, electron probe, transmission spectroscopy and photoluminescence spectroscopy. The results show that the film has a hexagonal wurtzite structure, and has good crystalline characteristics. In the range of visible light and infrared light, the film has good transparency; the transmission spectrum is fitted by the reverse rotation debugging method, and the thickness of the film is obtained. The effect of Al dopant on the band gap of ZnO was investigated by measuring the fluorescence spectra of the light-emitting diode. It was found that at the same temperature, .