论文部分内容阅读
本文介绍GaAs-GaAlAs阵列激光器的制作外延工艺、制管工艺、排列结构、散热的考虑和主要光电参数。该器件典型脉冲宽度(半宽)150ns,脉冲频率1kHz,输出峰值功率典型值100w,最大值为150w,阈值电流典型值为12A,最小值为10A。
This article describes the GaAs-GaAlAs array laser epitaxial manufacturing process, pipe technology, arrangement, cooling considerations and the main photoelectric parameters. The device has a typical pulse width (half-width) of 150ns, a pulse frequency of 1kHz, a typical output peak power of 100w, a maximum of 150w, a typical threshold current of 12A and a minimum of 10A.