本文用电子衍射、X 光衍射和红外(IR)、紫外(UV)吸收光谱研究了 MOCVD 技术生长的TiO_2结晶薄膜的结构,并对生长在(111)方向的P/P~+型硅单晶衬底上的 TiO_2薄膜的光电化学性能进行了研究。实验指出:采用 MOCVD 技术生长的 TiO_2薄膜(简称 MOCVD fiO_2)。取衬底温度400℃的典型工艺条件,在(111)方向的硅单晶片上(经严格的拋光和清洗)生长得到的 TiO_2膜进行 In this paper, the structure of TiO_2 crystalline films grown by MOCVD was studied by means of electron diffraction, X-ray diffraction, IR and UV absorption spectroscopy. The P / P ~ + type single crystal grown in the (111) The photoelectrochemical properties of TiO 2 films on the substrate were studied. Experiments show that: the use of MOCVD growth of TiO 2 film (referred to as MOCVD fiO_2). Taking the typical process conditions of the substrate temperature of 400 ° C, the TiO 2 films grown on the (111) -direction silicon single crystal wafer (subjected to rigorous polishing and cleaning) were subjected to