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绝缘衬底上以低压化学汽相淀积得到的多晶硅膜,经连续Ar~+激光再结晶后,电学性质显著改善,晶粒尺寸从原来的200～500埃增大到10μm左右。利用激光再结晶后的多晶硅膜制备了增强型N沟MOS FET。当L=12μm、W=250μm时,得到g_m=580μS,V_T=0.46V,μ_n=301cm~2/V·s,I_(DW)=4.2×10~(-12)A/μm。晶界势垒以及晶界缺陷态的散射作用是影响再结晶多晶硅膜电子表面迁移率的主要因素。激光处理过程中多晶硅熔化并再凝固,结果使晶粒长大并导致电学性质的改善。
The polycrystalline silicon film deposited on the insulating substrate by low pressure chemical vapor deposition has a significant improvement in electrical properties after continuous Ar ~ + laser recrystallization. The grain size increases from about 200 to 500 angstroms to about 10 μm. An enhanced N-channel MOS FET was fabricated using a polysilicon film after laser recrystallization. When L = 12μm and W = 250μm, g_m = 580μS, V_T = 0.46V, μ_n = 301cm ~ 2 / V · s and I_DW = 4.2 × 10 ~ (-12) A / μm. The grain boundary barrier and the scattering effect of the grain boundary defect state are the main factors affecting the electron mobility of the recrystallized polycrystalline silicon film. Polysilicon melts and resolidifies during laser processing, resulting in grain growth and electrical properties improvement.