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本论文研究了离子注入的能量、剂量、温度等因素与注入后形成的深度、浓度分布的关系,以获得优化的离子注入条件;研究了离子注入后的退火温度、时间、保护层等因素对SiC表面粗糙度、元素分布的影响关系;研究了离子注入后SiC芯片退火时的保护,以防止材料升华等;分析离子注入及高温退火过程中诱生缺陷的形成机理,以获得优化的高温退火条件。
In this thesis, the relationship between the energy, dose, temperature and other factors of ion implantation and the depth and concentration distribution formed after implantation were studied in order to obtain the optimized ion implantation conditions. The effects of annealing temperature, time, protective layer and other factors SiC surface roughness and elemental distribution. The protection of SiC chips during ion implantation annealing was studied in order to prevent material sublimation and so on. The formation mechanism of induced defects during ion implantation and high temperature annealing was analyzed to obtain optimized high temperature annealing condition.