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高温超导红外探测器的应用波长可延伸到 1 0 0 0 μm以上。与现有的半导体红外探测器比较有如下优点 :( 1 )在远红外探测和毫米波区 ,高温超导探测器是性能最好的器件 (LN温度 ) ,目前在 8 1 4μm性能最好的红外探测器是HgCdTe ,但它在 2 0 μm以后灵敏度大大下降 ,而不能用 ;对于30 0K工作的热释电等器件 ,其性能要低两个数量级 ;( 2 )列阵器件适合成像系统 ;( 3)低度功耗 ;( 4)成品率高 ,成本低。本文研究粒度及粒度分布、预烧次数、温度和时间与超导电性的关系。制备出单向好的Y系高温超导粉 ;研究了压力与靶材的成型关系 ;研究了热处理与靶材的超导电性的关系 :制备出30mm ,45mm ,6 0mm ,6 5mm ,1 0 0mm大尺寸的高Tc 超导靶材。D >4.5g/cm3 ,室温电阻<5Ω ,Tc>90K ,抗磁性好 ;采用直流溅射法制备出Y系高温超导薄膜 ;Tc≥ 90K ,ΔT <3K ,Jc>1× 1 0 6A/cm2 。所制备Y系高温超导红外探测器 ,平均响应率R( 5 0 0 .1 2 .1 ) =5× 1 0 3 V·W-1,平均噪声等效功率NEP( 5 0 0 .1 2 .1 ) =3.5× 1 0 2 W·Hz-1/2 ,平均探测率D ( 5 0 0 .1 2 .1 ) =5× 1 0 8cm·Hz·W-1/2 w-1。
High-temperature superconducting infrared detector wavelength can be extended to more than 1 0 0 0 μm. Compared with the existing semiconductor infrared detector has the following advantages: (1) In the far infrared detection and millimeter wave area, high temperature superconducting detector is the best performance of the device (LN temperature), the best performance at 8 1 4μm The infrared detector is HgCdTe, but its sensitivity drops greatly after 20 μm, but can not be used. The performance of pyroelectric devices working at 30 ° K is two orders of magnitude lower. (2) The array device is suitable for the imaging system. (3) low power consumption; (4) high yield, low cost. This paper studies the relationship between particle size and particle size distribution, number of pre-combustion, temperature and time and superconductivity. The Y-type high temperature superconducting powder with good uniaxial orientation was prepared. The relationship between the pressure and the target material was studied. The relationship between the heat treatment and the superconductivity of the target material was studied: 30mm, 45mm, 6 0mm, 6 5mm, 1 0 0mm large size high Tc superconducting target. D> 4.5g / cm3, room temperature resistance <5Ω, Tc> 90K, good diamagnetism; Y-series high temperature superconducting thin films were prepared by DC sputtering; Tc≥90K, ΔT <3K, Jc> 1 × 10 6A / cm2. The prepared Y series high temperature superconducting infrared detector, the average response rate of R (5 0 0 1 2 1) = 5 × 10 3 V · W -1, the average noise equivalent power NEP (5 0. .1) = 3.5 × 10 2 W · Hz-1/2, and the average detection rate D (5 0 0 .1 2 .1) = 5 × 10 8 cm · Hz · W -1/2 w -1.