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由于半导体压阻式力传感器具有其它类型的力传感器所不具备的优点,所以已广泛地应用于国民经济的许多部门。但是由于半导体材料固有缺点,使由这种材料制成的力传感器的温度特性变差。在这种情况下,人们研究出许多温度补偿的办法,使传感器的温度特性得以改善。
As semiconductor piezoresistive force sensors with other types of force sensors do not have the advantages, it has been widely used in many sectors of the national economy. However, due to the inherent disadvantages of semiconductor materials, the temperature characteristics of force sensors made from such materials deteriorate. Under such circumstances, many temperature compensation methods have been developed to improve the temperature characteristics of the sensor.