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近年来,Ga N基发光二极管(LED)的发展异常迅速,以玻璃为衬底的LED具有成本低、可大面积化生产等优点而引起了国内外许多科研机构的广泛研究兴趣。但由于普通玻璃较低的软化温度(500~600℃)以及与Ga N之间存在较大的晶格失配问题,一直阻碍其发展。重点综述了玻璃衬底上生长Ga N薄膜的方法以及改善外延层晶体质量的技术。分别介绍了两种在普通玻璃上生长Ga N的方法,即低温生长和局部加热生长,同时详述了采用缓冲层和横向外延过生长(ELO)技术对外延Ga N晶体质量的影响。对局部加热、ELO等技术在玻璃衬底LED方面的应用进行了分析和预测,认为以玻璃为衬底的LED终会取得快速地发展。
In recent years, the development of Ga N-based light-emitting diodes (LEDs) has been rapidly developed. The glass-based LEDs have attracted a great deal of research interest from many research institutes both at home and abroad for their advantages of low cost and large area production. However, the development of ordinary glass has been hindered by its lower softening temperature (500-600 ° C) and larger lattice mismatch with Ga N. The methods of growing Ga N thin films on glass substrates and the techniques of improving the crystal quality of epitaxial layers are reviewed. Two kinds of methods for growing Ga N on ordinary glass are introduced respectively, that is, low temperature growth and local heating growth. The influence of buffer layer and lateral epitaxial overgrowth (ELO) technology on the quality of epitaxial Ga N crystal is also described. Analyzed and predicted the application of local heating, ELO and other technologies in the field of glass substrate LED, the glass-based LED will eventually achieve rapid development.