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首次运用电子束光刻技术和真空沉积技术在硅片表面制备了宽度在20纳米Ni80Fe20薄膜铁磁金属纳米点连接,通过对铁磁金属薄膜纳米点连接样品在不同温度下的磁电阻和I~V的研究,得出宽度在20纳米的铁磁金属薄膜纳米点连接中所观察到的磁电阻现象是各向异性磁电阻,其导电行为主要是金属导体导电行为,受量子化电导作用较小;通过对宽度在20纳米至250纳米之间的不同宽度的纳米点连接的磁电阻的测量,发现纳米点连接的磁电阻比例以及电阻值均与纳米点连接的宽度没有必然关系;实验结果表明在20纳米宽的铁磁金属薄膜点连接样品中可能不存在铁磁金属纳米点接触样品中所观察到高比例的弹道磁电阻现象,其磁电阻行为仍然是在铁磁金属体材料中常见的各向异性磁电阻现象,受尺寸效应的影响较小.
For the first time, electron-beam lithography and vacuum deposition were used to fabricate Ni80Fe20 thin-film ferromagnetic metal nano-dots with a width of 20nm on the surface of the silicon wafer. The ferroelectric thin- V, it is concluded that the phenomenon of magnetic resistance observed in the connection of nanowire of ferromagnetic metal film with a width of 20 nm is anisotropic magnetoresistive. The conductive behavior of the ferromagnetic metal thin film is mainly the conductive behavior of the metal conductor, and the smaller the conductance due to the quantization conductance ; Through the width of 20 nanometers to 250 nanometers between the different width of the nano-point connection of the magnetic resistance measurement and found that the nano-point connection of the magnetic resistance ratio and the resistance value and the width of the nano-point connection is not necessary; experimental results show that The high ratio of ballistic magnetoresistance observed in ferromagnetic metal nanodots contact samples may not be present in 20 nm wide ferromagnetic metal film point-connected samples whose magnetoresistance behavior is still common in ferromagnetic metal bulk materials Anisotropic magnetoresistive phenomenon, the smaller the size effect.