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Based on the platform of 0.35μm PDSOI CMOS process technology,the partially depleted siliconon -insulator dynamic threshold voltage(PDSOI DT) NMOS with an H-gate was implemented.The analog characteristics and RF characteristics of the gate-body contacted dynamic threshold voltage H-gate NMOS and conventional H-gate NMOS were performed and compared.Furthermore,the fundamental operation principle and physical mechanism of the PDSOI H-gate DTMOS compared with the conventional H-gate NMOS are analyzed in detail.The results indicate that the cutoff frequency can reach 40 GHz and the maximum oscillation frequency 29.43 GHz as V_(gs) = 0.7 V and V_(ds)= 1V.
Based on the platform of 0.35 μm PDSOI CMOS process technology, the partially depleted silicon-insulator dynamic threshold voltage (PDSOI DT) NMOS with an H-gate was implemented. The analog characteristics and RF characteristics of the gate-body contacted dynamic threshold voltage H -gate NMOS and conventional H-gate NMOS were performed and compared. Focus of, the fundamental operation principle and physical mechanism of the PDSOI H-gate DTMOS compared with the conventional H-gate NMOS are analyzed in detail. The results indicate that the cutoff frequency can reach 40 GHz and the maximum oscillation frequency 29.43 GHz as V gs = 0.7 V and V ds = 1V.