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对LN晶片进行了Sr2+扩散的实验研究,研究表明,LN晶体的Sr2+扩散宜选择LNLi:SrO=80:20的陶瓷粉为扩散源,于950℃下扩散25h。Sr2+扩散主要是通过缺陷进行的,扩散系数较大,扩散活化能较小,可在较低的温度下进行,扩散最大量为8.07％,且Sr2+扩散杂质分布较Sr2+掺杂杂质分布均匀。
The experimental study on Sr2 + diffusion of LN wafers shows that the Sr2 + diffusion of LN crystals should be selected as the diffusion source of LNLi: SrO = 80:20 and diffused at 950 ℃ for 25h. The diffusion of Sr2 + is mainly through defects. The diffusion coefficient is larger and the activation energy of diffusion is smaller. It can be carried out at lower temperature. The maximum amount of diffusion is 8.07%, and the distribution of Sr2 + diffusion impurity is more uniform than that of Sr2 +.