论文部分内容阅读
南京固体器件研究所已研制成功栅长0.5μm、栅宽280μm,以φ2mm陶瓷金属微带管壳封装的实用化的GaAs MESFET.在9.5GHz下测得最佳水平器件的噪声系数为1.4dB,相关增益大于7dB.大部分器件的噪声系数在1.5～2.5dB范围内.与日本NEC的NE388MESFET进行同等条件下测试对比,说明测试结果可靠.
The Nanjing Institute of Solid State Devices has developed a practical GaAs MESFET with a gate length of 0.5μm and a gate width of 280μm and encapsulated in a φ2mm ceramic metal microstrip package.The noise figure of the best level device measured at 9.5GHz is 1.4dB, The relevant gain is greater than 7dB. The noise figure of most devices is within the range of 1.5 ~ 2.5dB. Compared with NE388MESFET of Japan NEC under the same conditions, the test result is reliable.