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采用传输矩阵方法（ＴＭＭ）对具有不同腔面反射率的半导体激光放大器的特性进行了分析。在相同的注入水平下镀膜后峰值增益波长会产生几十纳米的蓝移。讨论了沿腔面均匀注入和非均匀注入时的增益特性，输出功率较小时没有增益饱和效应，两种条件下增益差别不大；当要求输出功率大时，非均匀注入将优于均匀注入。
The characteristics of semiconductor laser amplifiers with different cavity surface reflectivity were analyzed by the transfer matrix method (TMM). The peak gain wavelength after coating at the same implant level produces a blue shift of tens of nanometers. The gain characteristics of uniform injection and non-uniform injection along the cavity surface are discussed. When the output power is small, there is no gain saturation effect, and the gain difference is not significant under the two conditions. When the output power is large, the non-uniform injection will be better than the uniform injection.