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硅外延层上的自然氧化层中的界面态,使汞—硅接触肖特基二极管反向偏置 C—V 特性偏离理想情况,给外延层杂质纵向浓度分布测定带来较大误差。当正向偏置电压为自建电势0.6V 时的归一化电容值如果明显偏离按外延层杂质浓度和自然氧化层厚度计算出来的平带电容值,就判明有界面态存在。将样品在化学纯氢氟酸中漂洗7分钟以上即可使界面态减少到不可察觉的程度,然后再进行 C—V 测量,可保证测定结果的正确性。
The interfacial states in the native oxide layer on the Si epitaxial layer make the reverse bias C-V characteristic of the mercury-silicon contact Schottky diode deviate from the ideal case, which brings great errors to the determination of the longitudinal concentration distribution of the epitaxial layer impurity. When the forward bias voltage is 0.6V, the normalized capacitance value is obviously deviated from the calculated value of the flatband capacitance by the epitaxial layer impurity concentration and the native oxide thickness. Rinsing the sample in chemically pure hydrofluoric acid for more than 7 minutes reduces the interfacial state to an unobtrusive degree, followed by a C-V measurement to ensure the correctness of the determination.