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利用磁控反应溅射方法以Ta作为缓冲层制备了Ta/NiO/NiFe/Ta薄膜, 磁性分析表明, 该结构薄膜的交换耦合场为9.6×10磢 103 A/m, 但是所需NiO的实际厚度增加了. 采用X射线光电子能谱研究了Ta/NiO/Ta界面, 并进行计算机谱图拟合分析. 结果表明界面反应是影响层间耦合的一个重要因素. 在Ta/NiO界面处发生了反应: 2Ta + 5NiO = 5Ni + Ta2O5, 使得界面有“互混层”存在. X射线光电子能谱深度剖析表明Ni + NiO的混合层厚度约8~10 nm, 从而导致NiO钉扎实际厚度增加.
Ta / NiO / NiFe / Ta thin films were prepared by magnetron reactive sputtering with Ta as buffer layer. Magnetic analysis showed that the exchange coupling field of this thin film was 9.6 × 10磢103 A / m. However, The thickness of Ta / NiO / Ta interface was increased by X-ray photoelectron spectroscopy (XPS), and the computer simulation of the Ta / NiO / Ta interface was performed.The results show that the interfacial reaction is an important factor affecting the interlayer coupling. Reaction: 2Ta + 5NiO = 5Ni + Ta2O5, making the interface there is “mixed layer.” X-ray photoelectron spectroscopy depth analysis shows that Ni + NiO mixed layer thickness of about 8 ~ 10 nm, resulting in the actual thickness of NiO pinning increase.