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The GHO(Gd2O3-doped HfO2)films were epitaxially grown on Ge(001)substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition(PLD).Reflection high-energy electron diffraction(RHEED)and high-resolution transmission electron microscopy(HRTEM)observation revealed a sharp interface of GHO/Ge and orientation relationship corresponding to(001)GHO//(001)Ge and[011]GHO//[011]Ge.The band offset for GHO/Ge stack was evaluated to be 3.92 eV for valence band and 1.38 eV for conduction band by X-ray photoelectron spectrum.Small equivalent oxide thickness(0.49 nm)and interface state density(7×1011cm–2)were achieved from Au/Ti/GHO/Ge/Al capacitors.
The GHO (Gd2O3-doped HfO2) films were epitaxially grown on Ge (001) substrates using cube-on-cube mode with zero interface layer using pulsed laser deposition (PLD) .Reflection high-energy electron diffraction (RHEED) and high-resolution Transmission electron microscopy (HRTEM) observations revealed a sharp interface of GHO / Ge and orientation relationship corresponding to (001) GHO // (001) Ge and [011] GHO // [011] Ge.The band offset for GHO / Ge stack was evaluated as be 3.92 eV for valence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. True equivalent oxide thickness (0.49 nm) and interface state density (7 x 1011 cm -2) were obtained from Au / Ti / GHO / Ge / Al capacitors.