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介绍了以栅宽1.2mm GaAs FET 器件为基础的两级 GaAs 功率单片集成电路的设计、制作及其性能。该两级单片集成电路在10～11GHz 频带内,输出功率1W,增益10dB。
The design, fabrication and performance of a two-stage GaAs power monolithic integrated circuit based on a gate-width 1.2mm GaAs FET device are introduced. The two-stage monolithic integrated circuit in the 10 ~ 11GHz frequency band, the output power of 1W, gain 10dB.