介绍了半导体材料的霍尔效应及磁阻效应，讨论了磁阻元件的特性，找到了ＩｎＳｂ 磁阻特性曲线的拐点，提出旋转传感器的工作原理与结构设计，研制这种传感器的关键在于桥式电路的设计．本文也给出测试结果和应用前景 The Hall effect and magnetoresistive effect of the semiconductor material are introduced. The characteristics of the magnetoresistive element are discussed. The inflection point of the magneto-resistive characteristic curve of InSb is found out. The working principle and structural design of the rotating sensor are proposed. The key to develop this kind of sensor is bridge Circuit design. This article also gives the test results and application prospects