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真空蒸发技术制备的 Cd Te薄膜在可见光范围内的透射率很低 ,而且受材料配比和掺杂等因素的影响 .通过 Cd Te薄膜的透射光谱可计算出其吸收系数和光带隙 ,实验发现 ,掺In会使 Cd Te薄膜的光带隙变宽 .在电学特性上 ,Cd Te薄膜根据制备工艺的不同表现出 n型和 p型两种导电类型 ,本文主要研究了材料配比、掺 In及热处理对导电类型的影响 .另外掺杂及热处理会使 Cd Te薄膜电阻率下降达 2个数量级
The CdTe films prepared by vacuum evaporation have a very low transmittance in the visible range and are affected by factors such as the material ratio and doping, etc. The absorption coefficient and the optical band gap of the CdTe films can be calculated by transmission spectroscopy , The In band gap of CdTe thin film will be broadened when doped with In.In terms of electrical characteristics, the CdTe thin film shows two types of n-type and p-type conductivity types according to the preparation process. In this paper, And the effect of heat treatment on the conductivity type.Adding doping and heat treatment will decrease the resistivity of CdTe thin film by two orders of magnitude