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利用Ar+束溅射沉积技术在HgCdTe表面实现了低温CdTe介质薄膜的低温生长.在同一HgCdTe晶片表面分别用CdTe介质膜、HgCdTe自身阳极氧化膜进行表面钝化.利用光电导衰退测量技术测量了两种不同表面钝化的薄HgCdTe晶片的非平衡载流子(少数载流子)寿命,并通过光电导衰减信号波形的拟合,得到两种不同表面钝化的HgCdTe表面复合速度.实验结果表明,获得的CdTe/HgCdTe界面质量已超过了成熟的自身阳极氧化膜/HgCdTe界面质量水平
The low-temperature growth of low-temperature CdTe dielectric films was realized on the surface of HgCdTe by Ar + beam sputtering deposition technology.The surface of the same HgCdTe wafer was surface-passivated by CdTe dielectric films and HgCdTe self-anodic oxide films, respectively.The photoconductivity degradation The lifetime of non-equilibrium carriers (minority carriers) of different surface-passivated thin HgCdTe wafers was measured, and the surface recombination velocities of two different surface-passivated HgCdTe films were obtained by fitting the photoconductive attenuation signal waveform.The experimental results show that , The obtained CdTe / HgCdTe interface quality has exceeded the mature self-anodic oxide film / HgCdTe interface quality level