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InSb材料在Cd扩散后于表面产生了密度较高的小浅坑 ,对小坑的成分进行了分析 ,并根据结果对小坑的成因作了初步的推断。实验发现坑中Cd浓度约 4 4%。
The InSb material has a small density of shallow pits on the surface after Cd diffusion. The composition of the pits is analyzed. Based on the results, the origin of the pits is preliminarily inferred. The experiment found that the pit Cd concentration of about 44%.