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本文从动力学的观点出发,研究了各种条件下的光电导响应,以及有关的效应。本篇只讨论强电场下的光电导响应。 我们测量了不同照度和电场下的瞬态响应,发现强光区,在一定强电场下,时间常数τ_0随照度F的-0.5次方变化(τ_0=αF~(-0.5))。弱光区时间常数不变,在一定照度下,上升时间随电场指数变化;下降时间不变。由于晶体中的一些概念已不适用于非晶硅的情况,我们从Mott-CFO模型出发,用速率方程推导出弱光和强光照射下的光电导响应公式,较好地解释了实验结果。
In this paper, from the viewpoint of kinetics, the photoconductive response under various conditions and the related effects are studied. This article only discusses the strong electric field photoconductive response. We measured the transient response under different illuminance and electric field. We found that in the bright region, the time constant τ_0 changes with -0.5 th power (F_0 = αF ~ (-0.5)) under a certain strong electric field. The constant time constant of weak light is constant. Under a certain illuminance, the rising time changes with the electric field index; the falling time does not change. Since some of the concepts in the crystal are not suitable for amorphous silicon, we deduced the photoconductive response formula from the Mott-CFO model using the rate equation to explain the experimental results.