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采用溶液生成法制备了有机铅卤化钙钛矿(CH_3NH_3PbI_3)晶体粉末,并以过量的PbI_2对其进行掺杂,采用X射线衍射谱(XRD)技术研究了掺杂前后样品的晶体结构变化。表面光电压谱(SPS)和相位谱(PS)显示掺杂前后的CH_3NH_3PbI_3均为p型半导体,但后者有更强的光伏响应。场诱导表面光电压谱(FISPS)表明:当加正电场时,掺杂前后的CH_3NH_3PbI_3均表现为p型半导体的载流子特性,当加负偏压时掺杂后的CH_3NH_3PbI_3易形成反型层,出现光伏反转,且外加负偏压越大,光伏反转区域越大,表现出双极导电特性。
Organic perovskite perovskite (CH_3NH_3PbI_3) powders were prepared by solution-forming method and doped with PbI_2 excessively. The crystal structure of samples before and after doping was investigated by X-ray diffraction (XRD). Surface photovoltage spectroscopy (SPS) and phase spectrum (PS) showed that CH_3NH_3PbI_3 before and after doping were both p-type semiconductors, but the latter had stronger photovoltaic response. Field-induced surface photovoltage spectroscopy (FISPS) showed that the CH_3NH_3PbI_3 before and after doping exhibited the carrier characteristics of p-type semiconductors when a positive electric field was applied. When negative bias was applied, the doping CH_3NH_3PbI_3 easily formed an inversion layer, Photovoltaic reverse occurs, and the greater the negative bias applied, the greater the area of photovoltaic inversion, showing bipolar conductivity characteristics.