We investigate the photoinduced resistance change (△R/R) in a La0.6Sr0.4MnO3 film (Tc ～ 325 K) at different applied dc currents I (0.1-2.0mA) at 295K. At I = 0.1 mA, we have found a significant photoinduced △R/R ～17% under photo-irradiation at excitation energy Eexc = 3.05 eV and pump power Ppump = 2.5 m J/cm2, which has been ascribed to the photo-excited down-spin eg carriers and hence the spin-disorder in the ferromagnetic metallic state. With increasing applied electric current to 2.0mA, the magnitude of the photoinduced △R/R is reduced to 3%, which may be attributed to current-induced ordering of the localized spins.