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超级化学铜填充技术不仅可以应用于半导体超大集成电路铜互连线,而且可以应用于三维封装.研究了不同浓度、不同分子量的PEG对以甲醛为还原剂的化学镀铜溶液中铜的沉积速率的影响.随着添加剂PEG浓度和分子量的增大,化学铜的沉积速率明显降低.电化学研究结果表明PEG通过抑制甲醛的氧化反应降低化学铜的沉积速率.PEG分子量越大,对化学铜的抑制作用越强.利用PEG-6000对化学铜的抑制作用和在溶液中低的扩散系数,采用添加PEG-6000的化学镀铜溶液,成功地实现了宽度在0.2 μm以下微道沟的超级化学填充.就PEG的分子量、微道沟的深径比等因素对超级化学铜填充的影响也做了研究.“,”Bottom-up filling of electroless copper can be applied not only to semiconductor ultra-large-scale integration for copper interconnect lines, but also to three-dimensional package. The relationship of deposition rates of an electroless copper bath with the concentration and molecular weight (W_m) of polyethylene glycol (PEG) was investigated. The deposition rates decreased with the increases of PEG concentration and W_m. The result of liner sweep voltammetry measurement showed that PEG inhibited the electroless copper deposition and the inhibiting effect increased with an increase of PEG (W_m). Bottom-up filling of trenches was achieved by addition of PEG-6000 in its concentration gradient from the top to the bottom. The effects of PEG W_m and depth-to-width ratio of the trenches (aspect ratio) on the bottom-up filling of electroless copper were also studied.