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为获得与GaN薄膜晶格失配小的衬底材料,报道了利用气相传输平衡技术(VTE)在(100)-βGa2O3单晶衬底上制备高度[001]取向LiGaO2薄膜的方法。经过X射线衍射分析表明得到的薄膜是由单相LiGaO2组成。利用扫描电镜(SEM)观察表面形貌,发现经气相传输平衡技术处理得到的薄膜表面形貌主要受温度的影响,表面晶粒尺寸随温度上升而增大。而X射线衍射测试表明随着温度上升,所得到的薄膜也从多晶向单晶化转变。在经过退火处理后,通过观察吸收谱发现LiGaO2薄膜中产生色心,并且色心的种类与温度有关。表明可以通过气相传输平衡技术技术,在远低于LiGaO2熔点的温度制备外延GaN用(001)LiGaO2∥(100)β-Ga2O3复合衬底。
In order to obtain a substrate material with a small lattice mismatch with the GaN film, a method for preparing a highly [001] -oriented LiGaO2 thin film on a (100) -βGa2O3 single crystal substrate by vapor phase transfer equilibrium (VTE) has been reported. X-ray diffraction analysis showed that the resulting thin film is composed of single-phase LiGaO2. The surface morphology of the films was observed by scanning electron microscopy (SEM). The surface morphology of the films treated by gas phase equilibrium technique was mainly affected by temperature. The grain size of the films increased with the temperature rising. The X-ray diffraction test showed that as the temperature rises, the resulting thin film also transitions from polycrystalline to monocrystalline. After annealed, the color center is observed in the LiGaO2 film by observing the absorption spectrum, and the type of color center is temperature dependent. It is indicated that the (001) LiGaO2 // (100) β-Ga2O3 composite substrate for epitaxial GaN can be prepared at a temperature well below the melting point of LiGaO2 by gas-phase equilibrium technique.