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For the frequency range of 1 kHz-10 MHz,the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage (C-V) and conductance-frequency-voltage (G-f-V) measurements at room temperature.To obtain the real capacitance and interface state density of the Ni/p-GaN structures,the effects of the series resistance (Rs) on high-frequency (5 MHz) capacitance values measured at a reverse and a forward bias are investigated.The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 × 1012 eV-1 cm-2 and 0.94 × 1012 eV-1 cm-2,respectively.Furthermore,the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature,which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.