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在分子束外延(MBE)生长的基础上,采用脉冲阳极氧化工艺制作了非对称、宽波导InGaAlAs/AlGaAs/GaAs应变双量子阱(DQW)结构准连续(QCW)线阵半导体激光器,实现了808 nm波段线阵激光器的高效率、高功率运转。脉冲阳极氧化工艺主要用于器件工艺中的蚀刻与绝缘膜制备,电解液采用乙二醇∶去离子水∶磷酸∶2%盐酸的体积比为40∶20∶1∶1的混合溶液。研制的准连续线阵半导体激光器的填充因子约为72.7%,100 Hz,200μs准连续工作条件下的阈值电流约为24 A,斜率效率达到1.25 W/A,最大电-光转换效率达到51%。
Based on the growth of MBE, an asymmetric, wide waveguide InGaAlAs / AlGaAs / GaAs strained double quantum well (DQW) quasi-continuous structure (QCW) linear semiconductor laser was fabricated by pulse anodic oxidation nm band line laser high efficiency, high power operation. The pulse anodic oxidation process is mainly used for the etching and insulating film preparation in the device process. The electrolyte adopts a mixed solution of ethylene glycol: deionized water: phosphoric acid: 2% hydrochloric acid in a volume ratio of 40: 20: 1: 1. The quasi-continuous linear semiconductor laser has a fill factor of about 72.7%, a threshold current of about 24 A at 100 Hz and 200 μs quasi-continuous operation, a slope efficiency of 1.25 W / A and a maximum electrical-optical conversion efficiency of 51% .