论文部分内容阅读
研究了Er2O3掺杂对ZnO压敏电阻微观结构和电性能的影响。实验发现,在ZnO压敏电阻中加入Er2O3不仅可以提高压敏电压V1mA,同时还可改善非线性系数和漏电流特性。但过量的Er2O3将会使压敏电阻的耐大电流冲击特性劣化。微观结构和XRD图谱分析表明,Er2O3以一种化合物的形式存在于晶界,阻碍了晶界的运动,使材料烧结后具有较小的晶粒尺寸,并且粒径分布比较均匀。当Er2O3的添加量为0.8mol%时,样品的压敏电压V1mA约为360V/mm,非线性系数α达到86,并且在8/20μs的耐大电流冲击能力的试验中,样品耐受冲击电流的峰值大于1.6kA/cm2。
The effects of Er2O3 doping on the microstructures and electrical properties of ZnO varistors were investigated. The experiment found that the addition of Er2O3 to ZnO varistor can not only improve the voltage-sensitive voltage V1mA, but also improve the nonlinear coefficient and leakage current characteristics. However, excessive Er2O3 will deteriorate the resistance to large current shock of the varistor. The microstructure and XRD patterns show that Er2O3 exists as a compound in the grain boundaries, hindering the movement of the grain boundaries, resulting in a smaller grain size after sintering and a more uniform particle size distribution. When Er2O3 is added in an amount of 0.8 mol%, the sample has a voltage-sensitive voltage V1mA of about 360V / mm and a non-linear coefficient α of 86, and the sample withstands the inrush current in 8/20 μs high current impact resistance test The peak is greater than 1.6kA / cm2.