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提出了一种针对肖特基势垒特性曲线(Cj-Vj曲线)的测量方法 (特定电容法)。实验测定了特定电容C-V曲线,通过解析处理C-V曲线信息,计算得到肖特基势垒Cj-Vj曲线,以Cj-Vj曲线为应用基础,给出了评价GaN材料电学性能的重要参数施主杂质浓度和内建电压。实验检测了n/n+型硅外延材料,n型GaN体材料和n型GaN/蓝宝石外延材料。结果表明:三种材料的样品,杂质均匀分布;GaN材料施主杂质浓度为5×1016~2×1018cm-3,Hg-Si势垒内建电压0.605 V,Hg-GaN势垒的内建电压1.18 V。该方法检测GaN材料电学参数,具有测试简单,样品无损伤,没有欧姆接触、原则上适合各种衬底材料等优点,显然它更适合检测那些难以制作欧姆接触的半导体材料。
A measuring method (specific capacitance method) for Schottky barrier characteristic curve (Cj-Vj curve) is proposed. The CV curve of specific capacitance was measured experimentally, and the Cj-Vj curve of Schottky barrier was obtained by analyzing and processing the CV curve information. Based on the Cj-Vj curve, the important parameter for evaluating the electrical properties of GaN material was given. The donor impurity concentration And built-in voltage. The n / n + type silicon epitaxial material, the n-type GaN material and the n-type GaN / sapphire epitaxial material were examined experimentally. The results show that the samples and impurities of the three materials are uniformly distributed. The donor impurity concentration of GaN is 5 × 1016 ~ 2 × 1018cm-3, the built-in voltage of Hg-Si barrier is 0.605 V, and the built-in voltage of Hg-GaN barrier is 1.18 V. The method of detecting the electrical parameters of GaN material has the advantages of simple testing, no sample damage, no ohmic contact, and suitable for various substrate materials in principle. Apparently, the method is more suitable for detecting semiconductor materials that are difficult to make ohmic contacts.