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采用 MOCVD技术以 Al2 O3为衬底在 Ga N膜上生长了 In Ga N薄膜 .以卢瑟福背散射 /沟道 (RBS/Channeling)技术和光致发光 (PL )技术对 Inx Ga1 - x N / Ga N / Al2 O3样品进行了测试 ,获得了合金层的组分、厚度、元素随深度分布、结晶品质及发光性能等信息 .研究表明生长温度和 TMIn/ TEGa比对 In Ga N薄膜的 In组分和生长速率影响很大 .在一定范围内 ,降低 TMIn/ TEGa比 ,In Ga N膜的生长速率增大 ,合金的 In组分反而提高 .降低生长温度 ,In Ga N膜的 In组分提高 ,但生长速率基本不变 . In Ga N薄膜的结晶品质随 In组分的增大而显著下降 ,In Ga N薄膜的 In组分由 0 .0 4增大到 0 .2 6 ,其最低沟道产额比由 4.1%增至 5 1.2 % . In Ga N薄膜中 In原子易处于替位位置 ,在所测试的 In组分范围 ,In原子的替位率均在 98%以上 .得到的质量良好的 In0 .0 4Ga0 .96 N薄膜的最低产额为 4.1% .研究结果还表明用 RBS技术和光致发光技术测定 In Ga N中 In组分的结果相差很大 ,In Ga N的PL谱要受较多因素影响 ,很难准确测定 In组分 ,而以 RBS技术得到的结果是可靠的 .
In Ga N thin films were grown on Ga N films using Al 2 O 3 as a substrate by MOCVD technique.The effects of In Ga n - Ga N / Al 2 O 3 samples were tested and the composition, thickness, element depth distribution, crystal quality and luminescent properties of the alloy layer were obtained.The results show that the growth temperature and TMIn / TEGa ratio of In group The growth rate of InGaN films increases greatly and the In composition of InGaN films increases.Increasing the growth temperature, the In composition of In GaN film increases , But the growth rate is basically unchanged.The crystal quality of In Ga N thin film decreases with the increase of In composition.The In composition of In Ga N thin film increases from 0.040 to 0.226 with the lowest ditch The yield ratio increased from 4.1% to 5.2%. In In GaN thin films, In atoms were easily replaced by substitution sites, and the In atom substitution ratios were all above 98% in the In composition range tested. The minimum yield of a good In0 .04Ga0.96N thin film was 4.1%. The results also show that the RBS technology and photoinduced The results of the In composition of In Ga N by the luminescence technique vary greatly. The PL spectrum of In Ga N is affected by many factors and it is difficult to accurately determine the In composition. The results obtained by the RBS technique are reliable.