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采用新的工艺技术,成功研制了具有抬高源漏结构的薄膜全耗尽SOICMOS器件.详细阐述了其中的关键工艺技术.器件具有接近理想的亚阈值特性,nMOSFETs和pMOSFETs的亚阈值斜率分别为65和69mV/dec.采用抬高源漏结构的1.2μmnMOSFETs的饱和电流提高了32%,pMOSFETs的饱和电流提高了24%.在3V工作电压下101级环形振荡器电路的单级门延迟为75ps.
Using the new process technology, a fully depleted SOICMOS thin film device with a raised source / drain structure has been successfully developed, and the critical process technology has been described in detail.The subthreshold characteristics of the devices are close to ideal.The subthreshold slopes of nMOSFETs and pMOSFETs are 65 and 69mV / dec. The saturation current of the 1.2μmnMOSFETs with the raised source / drain structure increased by 32% and the saturation current of the pMOSFETs by 24%. The single-stage gate delay of the 101-ring oscillator circuit was 75ps at 3V operation .