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采用热丝化学气相沉积法在p型硅衬底上制备了不同织构的多晶金刚石膜,使用XRD表征了CVD金刚石膜的结构特征,研究了退火后不同织构金刚石膜的电流特性,使用Hall效应检测仪研究了金刚石膜的霍尔效应特性及随温度变化的规律,结果表明所制备的金刚石膜是p型材料,载流子浓度随着温度的降低而增加,迁移率随着温度的降低而减小.室温下[100]织构金刚石薄膜的载流子浓度和迁移率分别为4.3×104cm 3和76.5 cm2/V·s.
Polycrystalline diamond films with different textures were fabricated on hot-wire chemical vapor deposition on p-type silicon substrates. The structure characteristics of CVD diamond films were characterized by XRD. The current characteristics of different textured diamond films after annealing were studied. Hall effect detector studied the Hall effect characteristics of diamond film and the law with temperature, the results show that the prepared diamond film is a p-type material, the carrier concentration increases with decreasing temperature, the mobility with temperature Decreases and decreases.The carrier concentration and mobility of [100] textured diamond films at room temperature are 4.3 × 10 4 cm 3 and 76.5 cm 2 / V · s, respectively.