前已发现，将ＧａＡｓ（１００）晶片浸入Ｓ２Ｃｌ２或Ｓ２Ｃｌ２＋ＣＣｌ４溶液是实现ＧａＡｓ表面钝化的一种有效途径．用同步辐射光电子能谱研究这种表面能直接测量Ｓ２ｐ芯能级谱，从而揭示，在浸泡后的表面存在多种形态的含硫化合物．ＡｓｘＳｙ是其中的主要成分，但轻度退火就能去除．随着退火过程中Ｓ原子从Ａｓ－Ｓ转移到Ｇａ－Ｓ，Ｇａ３ｄ谱中始终出现两个与Ｇａ－Ｓ相关的分量，表明稳定的钝化同表面Ｇａ－Ｓ键的存在联系在一起 It has been previously found that the GaAs (100) wafer immersed in S2Cl2 or S2Cl2 + CCl4 solution is an effective way to achieve passivation of GaAs surface. Using synchrotron radiation photoelectron spectroscopy to study the surface energy directly measured S2p core energy spectrum, revealing that there are many forms of sulfur compounds on the surface after soaking. AsxSy is one of the main components, but can be removed by mild annealing. With the transfer of the S atom from As-S to Ga-S during annealing, two Ga-S-related components always appear in the Ga3d spectrum, indicating that stable passivation is associated with the presence of surface Ga-S bonds