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利用SILVACO TCAD工艺仿真和器件仿真软件研究了110 V体硅LDMOS器件的几个重要参数对器件耐压特性的影响.研究结果表明,漂移区剂量存在一个最优值,过大将导致漂移区难以耗尽而使得沟道与漂移区边界发生击穿,而过小则导致漂移区迅速耗尽而在漏端表面发生击穿;衬底浓度低对提高开态击穿电压有一定效果,但低浓度衬底难以在CMOS工艺中使用;场氧与P阱和漂移区的PN结界面距离在零或者略大于零时器件耐压性有最优值;栅极板长度存在最优值,栅极板过长或过短都将使得器件的击穿电压有所降低.
The influence of several important parameters of 110 V bulk silicon LDMOS device on the breakdown voltage characteristics of the device is studied by SILVACO TCAD process simulation and device simulation software.The results show that there is an optimal dose in the drift region and too large will cause the drift region difficult to consume So as to cause the breakdown of the channel and the drift region boundary. When the voltage is too small, the drift region rapidly runs out and the breakdown occurs on the drain end surface. The low substrate concentration has some effects on increasing the on-state breakdown voltage. However, The substrate is difficult to be used in the CMOS process; the distance between the field oxygen and the PN junction of the P-well and the drift region is optimal at zero or slightly greater than zero; the gate plate length is optimal, and the gate plate Too long or too short will make the device breakdown voltage is reduced.