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ZnO因其价格便宜、无毒等优点,最有希望替代昂贵的掺锡氧化铟ITO,但未掺杂ZnO是高阻材料,如何提高其光电性能,制备出高质量的ZnO薄膜是实现其应用的关键。其中,Ga掺杂是提高ZnO性能的一种有效手段。从制备方法、掺杂浓度、生长条件等方面综述了Ga掺杂ZnO(GZO)薄膜光电性能的研究进展,归纳总结后发现:适当增加掺杂量、提高衬底温度等都有利于薄膜光学和电学性能的提高。目前,GZO薄膜电阻率最低可达10-3～10-4Ω.cm,透光率一般可达80%以上,光电性能可以满足透明导电膜的要求,但其性能的稳定性还不如广泛使用的ITO。因此,GZO薄膜要达到实际应用要求,尚需进一步优化工艺,提高其性能的稳定性。
ZnO is the most promising alternative to indium tin oxide (ITO) due to its cheapness and nontoxicity. However, undoped ZnO is a high-resistance material. How to improve the optoelectronic properties of ZnO is the key to realizing high-quality ZnO thin films key. Among them, Ga doping is an effective means to improve the properties of ZnO. The research progress of optoelectronic properties of Ga-doped ZnO (GZO) thin films is reviewed from the aspects of preparation method, doping concentration and growth conditions. It is concluded that appropriate doping amount and substrate temperature are beneficial to the optical properties of thin films Electrical performance improvement. At present, the lowest resistivity of GZO film can reach 10-3 ~ 10-4Ω.cm, the light transmittance can reach more than 80%, and the optoelectronic properties can meet the requirement of transparent conductive film, but its performance is not as stable as widely used ITO. Therefore, GZO film to meet the practical application requirements, still need to further optimize the process to improve the stability of its performance.