论文部分内容阅读
四、磷化铟在微波领域的应用前景 1970年,英国皇家雷达研究所Hilsum在理论上预言,InP是具有三能谷跃迁机构的材料,作为转移电子振荡器和放大器,预期可获得比GaAs器件更高的性能。之后,曾引起了一场关于InP电子转移机构究竟是三能谷还是二能谷的争论。最近一系列的研究表明,不论它是三能谷还是二能谷电子转移机构,InP转移电子器件比类似的GaAs器件具有更多的优越性:
In four, the indium phosphide in the field of microwave applications In 1970, the British Royal Institute of radar Hilsum in theory predicted that InP is a material with three-energy valley transition mechanism, as the transfer of electronic oscillators and amplifiers, is expected to obtain GaAs devices Higher performance. After that, there was a debate about whether the InP electron transfer mechanism was actually a three-energy or a two-energy valley. A series of recent studies have shown that InP transfer electronics have more advantages than similar GaAs devices, whether they are the Tri-Valley or the Energetic electron transfer mechanism: