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采用单靶磁控溅射法制备了铜铟硒(CIS)和铜铟锌硒(CIZS)薄膜。XRD表征发现CIZS-300出现了与其它薄膜不同的择优取向,分析认为贫铜的状态和适宜温度可能促使薄膜择优取向从(112)向(220)转化;拉曼光谱在171 cm-1处出现的较强峰,和206 cm-1处出现的较弱峰,分别为A1和B2振动模式,而Zn的掺入导致A1拉曼峰的宽化和蓝移;Zn的掺入使Cu含量改变进而使CIZS禁带宽度增大,这是由于Se的p轨道和Cu的d轨道杂化引起的;SEM测试结果表明CIZS薄膜表面比CIS表面更为紧密、平滑。
Copper-indium selenide (CIS) and copper-indium-zinc-selenide (CIZS) thin films were prepared by single-target magnetron sputtering. The results of XRD showed that the preferred orientation of CIZS-300 was different from that of other films. It was found that the state of poor copper and proper temperature might induce the preferred orientation of the film to be transformed from (112) to (220), and the Raman spectrum appeared at 171 cm-1 And the weaker peak at 206 cm-1 are the A1 and B2 vibrational modes, respectively. The incorporation of Zn results in the broadening and blue-shift of the A1 Raman peak. The incorporation of Zn changes the Cu content Which in turn caused the CIZS bandgap to increase due to the hybridization of the p orbital of Cu and the d orbital of Cu. The SEM results showed that the surface of CIZS film was more compact and smooth than the CIS surface.