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用分子束外延设备(MBE)在GaAs(100)衬底上生长了InSb型界面的AlSb/InAs超晶格,界面生长过程中采用了As保护下不同的中断时间.运用掠入射X射线反射技术(GIXRR)对样品进行了测量,并对测量结果进行了模拟和分析,发现As保护下生长中断20s能获得最平整的AlSb/InAs界面.结合分析显微镜下观察到的样品形貌,过短的界面中断时间会导致界面富In并形成In点,而过长的中断时间会导致AlAs型界面的形成,两者都使界面变得粗糙.另外,还讨论了生长中断在分子束外延生长中的应用.
The InSb interface AlSb / InAs superlattice was grown on a GaAs (100) substrate by molecular beam epitaxy (MBE), and different interrupting times under As protection were used in the interfacial growth.Granded incident X-ray reflectometry (GIXRR) were used to measure the samples, and the results were simulated and analyzed.It was found that the most flat AlSb / InAs interface can be obtained after the growth of As under the protection of growth for 20s.The morphology of the samples observed under the microscope is too short Interfacial disruption time leads to In rich in the interface and formation of In point, while too long disruption time leads to the formation of AlAs-type interface, both of which make the interface rougher.In addition, the growth interruption is also discussed in molecular beam epitaxy application.