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将C+离子注入硅衬底,衬底温度约为400℃,C+离子引出电压为45keV注入剂量为5×1017cm-2.经高温退火形成碳化硅沉淀,利用X射线光电子能谱(XPS),俄歇电子能谱(AES)及傅立叶变换红外吸收光谱(FTIR),对所形成的碳化硅埋层作了初步的分析.
The C + ions were implanted into the silicon substrate at a substrate temperature of about 400 ° C and a C + ion extraction voltage of 45 keV at a dose of 5 × 10 17 cm -2. The silicon carbide precipitates were formed by high temperature annealing. X-ray photoelectron spectroscopy (XPS) Electron Spectroscopy (AES) and Fourier Transform Infrared Absorption Spectroscopy (FTIR) were used to analyze the buried layer of silicon carbide.