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本文报道了一种能同时确定半导体体内少子复合寿命和半导体表层空间电荷区少子产生寿命的实验技术。在处于强反型的MOS电容器上加一矩形脉冲,使其变为平带状态。此时,反型少子将注入半导体体内,并在那里复合。当脉冲结束时,尚未复合的反型少子被扫回半导体表面,MOS结构则进入深耗尽态。此后,在不变的栅压下,通过空间电荷区的少子产生,MOS结构将逐渐弛豫回到加脉冲前的强反型态。本文指出,由前一过程可确定少子复合寿命,而由后一过程可确定产生寿命,文中并分析讨论了界面态对测量结果的影响。
In this paper, we report an experimental technique that can simultaneously determine the lifetime of minority carriers in the semiconductor body and the minority charge carriers in the space charge region of the semiconductor surface. A strong pulse in the MOS capacitor plus a rectangular pulse, it becomes flat belt state. At this point, anti-type minority son will be injected into the semiconductor body, and compound there. When the pulse ends, the non-recombined antiporter is swept back into the semiconductor surface, and the MOS structure goes deep into depletion. After that, under the constant gate voltage, the MOS structure will gradually relax back to the strong inversion mode before the pulse through the minority carriers in the space charge region. This paper points out that the former process can determine the life of young children, and the latter process can determine the life span. In this paper, the effect of interface states on the measurement results is analyzed and discussed.