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已研制出采用AlGaAs/GaAs结构的异质结双极晶体管,它可用于微波毫米波放大器中。通过简单光刻(器件特征为1μm或以上)就可得到的这些晶体管可为直到毫米波频段的功率放大器提供很高的增益和效率。本文报告了HBT的发展状况。
Heterojunction bipolar transistors using AlGaAs / GaAs structures have been developed for use in microwave millimeter-wave amplifiers. These transistors, which are available through simple lithography (device features of 1 μm or more), provide high gain and efficiency for power amplifiers up to the millimeter-wave band. This article reports the development of HBT.