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通过对样品 V- I特性和势垒特性的测试和分析 ,研究了掺锑对二氧化锡压敏电阻性能的影响。Sn O2 ·Co2 O3基本上不具有电学非线性 ,掺杂很少量的 Sb2 O3可明显改善材料的非线性。研究中发现掺杂 x ( Sb2 O3)为0 .0 1%的样品具有最高的质量密度 (ρ=6.90 g/ cm3)、最高的视在势垒电场 ( EB=2 76V / cm)和最好的电学非线性( α=12 .89)。提出了 Sn O2 · Co2 O3· Sb2 O3的晶界缺陷势垒模型。
The effect of antimony on the performance of SnO2 varistor was investigated by testing and analyzing the V-I characteristics and the barrier characteristics of the sample. SnO2 · Co2 O3 basically does not have electrical non-linearity, doped with a small amount of Sb2O3 can significantly improve the material nonlinearity. The results show that the samples with 0.1% doped x (Sb 2 O 3) have the highest mass density (ρ = 6.90 g / cm 3), the highest apparent barrier potential (EB = 2 76 V / cm) The electrical nonlinearity (α = 12.89). A grain boundary defect barrier model of Sn O2 · Co2 O3 · Sb2 O3 was proposed.