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为了减少芯片面积,提高电荷泵的增益,提出一种基于共享技术的电荷泵电路。通过改变两个子电荷泵的串并连接关系,既可以产生一种电压较高而电流驱动能力较小的负高压,也可以产生一种电压较低但是电流驱动能力很大的负高压,这不仅满足了系统在编程和擦除时对高压的不同需求,而且还节省了大约50%的芯片面积。电荷泵电路还采取了对其中P型M O S管的衬底电压进行动态控制的方法。模拟结果表明,该电荷泵的增益提高了大约14%。该电路特别适用于需要两种以上负高压以完成编程和擦除操作的快闪存储器。
In order to reduce the chip area and improve the gain of the charge pump, a charge pump circuit based on shared technology is proposed. By changing the series connection of the two sub-charge pumps, it is possible to produce either a negative voltage with a higher voltage and a lower current-driven capacity, or a negative voltage with a lower voltage but with a higher current-driven capability, not only The system meets the different needs of high voltages during programming and erasing, and also saves about 50% of the chip area. The charge pump circuit also takes a method of dynamically controlling the substrate voltage of the P-type MOSFET. Simulation results show that the charge pump gain increased by about 14%. This circuit is especially suitable for flash memories that require more than two negative high voltages to complete programming and erase operations.