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文章主要研究利用金属有机物化学汽相沉积(MOCVD)方法制备的Mg掺杂A lGaN薄膜。根据Raman光谱对Mg掺杂A lGaN薄膜应力和X射线摇摆曲线对晶体质量的研究表明引入高温A lN插入层能有效调节应力,并提高薄膜质量,降低位错密度。实验发现在保持Mg掺杂量不变的情况下,随着A l组分的上升,材料中出现大量岛状晶核,粗糙度变大,晶体质量下降,由三维生长向二维生长的转变更加困难。同时研究发现A l组分的上升和Mg掺杂量的增加都会使得螺位错密度上升;Mg的掺杂对于刃位错有显著影响,而A l组分的上升对刃位错无明显影响。经过退火温度对空穴浓度影响的研究,发现对于P型A l0.1Ga0.9N样品,900℃为比较理想的退火温度。
The article mainly studies the Mg doped AlGaN thin films prepared by metal organic chemical vapor deposition (MOCVD). The Raman spectra of Mg-doped AlGaN thin films and X-ray rocking curves of the crystal quality studies show that the introduction of high temperature AlN insertion layer can effectively adjust the stress and improve the film quality and reduce the dislocation density. The experimental results show that with the increase of Al component, a large number of island nuclei appear in the material, the roughness increases, the crystal quality decreases, the transition from three-dimensional growth to two-dimensional growth more difficult. At the same time, it was found that the increase of Al component and the increase of Mg doping lead to the increase of screw dislocation density. The doping of Mg has a significant effect on edge dislocation, while the increase of Al component has no significant effect on edge dislocation . After the annealing temperature on the hole concentration of the study found that for the P-type A l0.1Ga0.9N samples, 900 ° C for the more ideal annealing temperature.