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结合薛定谔方程和泊松方程,模拟计算得到GaAs/AlGaAs多量子阱红外探测器外延材料能带图,并对该材料进行光致荧光谱(PL)测量。结合理论计算,由材料吸收峰位置得到势垒高度以及势阱基态位置,采用传输矩阵法得到价带与导带基态能量,并由此推算出相应的红外探测响应波长。以傅里叶变换红外光谱仪对GaAs/AlGaAs多量子阱红外探测器器件进行光谱测量,测量结果表明,所采用的计算方法得出的理论结果与器件的光电流谱吻合较好,利用光荧光谱对外延材料进行测量,可以在器件工艺前,快速确定器件的探测波长,从而更加有效地开展器件的研究。
Combined with Schrödinger equation and Poisson equation, the energy band diagram of GaAs / AlGaAs multi quantum well infrared detector epitaxial material was simulated and measured by PL spectroscopy. Combining with the theoretical calculation, the barrier height and the ground state of the potential well are obtained from the absorption peak position of the material, and the ground-state energies of the valence band and the conduction band are obtained by the transfer matrix method, and the corresponding infrared detection response wavelength is calculated. The spectrum of the GaAs / AlGaAs MQW detector was measured by Fourier transform infrared spectroscopy. The measured results show that the theoretical results obtained by the calculation method are in good agreement with the photocurrent spectra of the device. The fluorescence spectra Epitaxial materials are measured, you can quickly determine the device before the detection of the device wavelength, in order to more effectively carry out the device research.