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研究了不同条件下的退火对高Al组分AlGaN P-I-N二极管性能的影响。研究结果表明,合适的退火条件既能使AlGaN与电极之间形成良好的欧姆接触,同时又能显著降低AlGaNP-I-N二极管的反向漏电流,反偏压5V时,暗电流密度由2.0×10-1A/cm2降为5.7×10-5A/cm2,串阻由18.01kΩ减小到1.071kΩ,从而优化了AlGaN P-I-N二极管的I-V特性。分析认为这与退火改善接触电极特性,同时消除器件制备工艺中引入的损伤、降低缺陷态密度有关。
The effects of annealing under different conditions on the performance of AlGaN P-I-N diodes with high Al content were investigated. The results show that the suitable annealing conditions not only make the ohmic contact between AlGaN and the electrode well, but also reduce the reverse leakage current of AlGaNP-IN diode. When the bias voltage is 5V, the dark current density is reduced from 2.0 × 10 -1A / cm2 to 5.7 × 10-5A / cm2, the string resistance is reduced from 18.01kΩ to 1.071kΩ, which optimizes the IV characteristics of the AlGaN PIN diode. It is considered that this is related to improving the contact characteristics of the electrode by annealing, eliminating the damage introduced in the device preparation process and reducing the density of defect states.